Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10407066 | Materials Science in Semiconductor Processing | 2013 | 5 Pages |
Abstract
CdS is one of the highly photosensitive candidate of II-VI group semiconductor material. Therefore CdS has variety of applications in optoelectronic devices. In this paper, we have fabricated CdS nanocrystalline thin film on ultrasonically cleaned glass substrates using the sol-gel spin coating method. The structural and surface morphologies of the CdS thin film were investigated by X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscopy (FESEM) respectively. The surface morphology of thin films showed that the well covered substrate is without cracks, voids and hole. The round shape particle has been observed in SEM micrographs. The particles sizes of CdS nanocrystals from SEM were estimated to beâ¼10-12Â nm. Spectroscopic properties of thin films were investigated using the UV-vis spectroscopy, Photoluminescence and Raman spectroscopy. The optical band gap of the CdS thin film was estimated by UV-vis spectroscopy. The average transmittance of CdS thin film in the visible region of solar spectrum found to beâ¼85%. Optical band gap of CdS thin film was calculated from transmittance spectrum â¼2.71Â eV which is higher than bulk CdS (2.40Â eV) material. This confirms the blue shifting in band edge of CdS nanocrystalline thin films. PL spectrum of thin films showed that the fundamental band edge emission peak centred at 459Â nm also recall as green band emission.
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Authors
Munirah Munirah, Mohd. Shahid Khan, Anver Aziz, Saadah Abdul Rahman, Ziaul Raza Khan,