Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10407117 | Materials Science in Semiconductor Processing | 2016 | 5 Pages |
Abstract
Tungsten oxide films with different thickness were grown by sputtering deposition. Analysis of sample morphology showed that the films were constituted by sub-micrometric columnar structures, with diameters in the range 100-500 nm. As-deposited films revealed an almost-amorphous crystal structure and a wide optical band-gap of about 3.28 eV. Thermal annealing at 500 °C was used to promote the formation of a monoclinic WO3 crystal structure and the reduction of the band-gap. Photo-electrochemical characterizations were used to compare the responses of the different films and to evaluate their possible use in water splitting applications.
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Authors
D. Valerini, S. Hernández, F. Di Benedetto, N. Russo, G. Saracco, A. Rizzo,