| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10407130 | Materials Science in Semiconductor Processing | 2005 | 4 Pages |
Abstract
Tight binding calculations of the band alignment in InAs/GaSb type II broken-gap superlattices have been carried out with a valence band offset value of 0.57Â eV obtained at root temperature 300Â K, in good agreement with experiments. The valence band offset decreases with temperature, whereas the band overlap exhibits curvature with minimum at 550Â K. It is inferred that there is no possibility of band alignment transition due to temperature.
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Authors
A.J. Ekpunobi,