| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10407133 | Materials Science in Semiconductor Processing | 2005 | 4 Pages |
Abstract
The influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices is studied using a recently reformulated tight binding method. A model, including interfacial reactivity at the ZnSe/GaAs interface, for calculating valence band offsets is presented. The model result of 1.02Â eV for valence band offset at the ZnSe/GaAs interface is in good agreement with experiments.
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Authors
A.J. Ekpunobi,