Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10407136 | Materials Science in Semiconductor Processing | 2005 | 6 Pages |
Abstract
ZnO thin films on (0 0 0 1) sapphire large area substrates (Φ50Ã0.43 mm) have been deposited by atmospheric pressure MOCVD. To investigate the effects of post-annealing treatment on the structural and luminescent properties of ZnO thin films, films have been annealed in nitrogen at various annealing temperatures from 400 to 800 °C. The best crystal quality of ZnO films was obtained with annealing temperatures up to 800 °C by measuring the FWHM of (1 0 2) and (0 0 2) peak. At annealing temperature above 700 °C, the intensity of UV (377 nm) peak is greatly decreased, and the deep-level emission peak (500 or 500-525 nm) is enhanced. The study of structural and luminescent properties of ZnO thin films annealed in nitrogen shows that the crystallinity of ZnO thin films is not easily degraded by oxygen vacancies, or say, the deficient oxygen nonstoichiometric ZnO single crystal films may be of better crystallinity as that of the deficient nitrogen nonstoichiometric single crystal GaN films reported.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Yufeng Chen, Yong Pu, Li Wang, Chunlan Mo, Wenqing Fang, Bingchuan Xiong, Fengyi Jiang,