Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10407139 | Materials Science in Semiconductor Processing | 2005 | 4 Pages |
Abstract
The novel simple method of GaN nanocrystallites synthesis is presented. Their structure and morphology was investigated. The average sizes of GaN nanocrystallites as determined from XRD and TEM measurements were ca.10Â nm. The Raman and photoluminescence spectra were measured and analyzed. It was found that the photoluminescence of GaN nanocrystallites exhibits the broad band with a maximum in the red at 650Â nm. This luminescence was strongly quenched with increasing temperature.
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Authors
M. Nyk, W. StrÄk, J.M. JabÅoÅski, L. KÄpiÅski, R. Kudrawiec, J. Misiewicz,