Article ID Journal Published Year Pages File Type
10407139 Materials Science in Semiconductor Processing 2005 4 Pages PDF
Abstract
The novel simple method of GaN nanocrystallites synthesis is presented. Their structure and morphology was investigated. The average sizes of GaN nanocrystallites as determined from XRD and TEM measurements were ca.10 nm. The Raman and photoluminescence spectra were measured and analyzed. It was found that the photoluminescence of GaN nanocrystallites exhibits the broad band with a maximum in the red at 650 nm. This luminescence was strongly quenched with increasing temperature.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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