| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10407143 | Materials Science in Semiconductor Processing | 2005 | 5 Pages |
Abstract
Photoluminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed.
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Authors
Y.W. Zhao, H.W. Dong, J.M. Li, L.Y. Ling,