On the performance of the double-diode model in estimating the maximum power point for different photovoltaic technologies

The purpose of this work is twofold: first to investigate the accuracy of Photo-Voltaic (PV) modeling under non-standard test conditions (STCs), and then to estimate the inaccuracies on maximum power prediction for different PV technologies; this is achieved through the comparison between predicted and measured data under a variety of operating conditions. The developed technique is based on the identification of the modules parameters of the double-diode equivalent circuit. The model has been validated by experimental data taken on five different ∼2 kWp plants of the PV LABoratory (PV-LAB), with different interconnection schemes, and it predicts the power production for mono and poly crystalline Silicon (m-Si and p-Si) plants, while the prediction for CIGS and CdTe PV plants appears less accurate. Results of this comparison are then used to analyze the impact of prediction inaccuracy under real operating conditions.