Fast extraction of static parameters of Schottky diodes from forward I-V characteristic

A method of fast extraction of the main static parameters of a Schottky diode (a barrier height, a current saturation density, a base resistance) is proposed. It is based on a modified Chuang analytical model. The model implies a 1D solution of the transport equations and takes into account the effect of a base resistance modulation. It leads to a transcendental equation that may be solved through high-speed standard algorithms. It is shown by the numerical simulation that the assumptions of Chuang model are typically valid up to V < 0.4 V. The method is suitable for 100% non-damage control of parameters of Schottky diodes during their manufacturing.