| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10408427 | Optics & Laser Technology | 2005 | 5 Pages |
Abstract
A laser-diode-pumped passively Q-switched new type crystal Nd3+:NaY(WO4)2 (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different output coupler reflectivities are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.
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Electrical and Electronic Engineering
Authors
Shengzhi Zhao, Lei Chen, Hongming Zhao, Guiqiu Li, Lu Zhang, Kejian Yang,