Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10408435 | Optics & Laser Technology | 2005 | 5 Pages |
Abstract
In this paper, we develop an integration technology between Si microlens and 256(H)Ã256(V) element PtSi Schottky-barrier infrared charge coupled device (IR-CCD) to improve the optical responsivity of CCD sensor. The refractive microlenses with the pixel size of approximately 28Ã28μm2 is directly fabricated on the backside of CCD substrate to focus the incident irradiation onto the active area. For the integration device the fill factor is improved by a factor of 2.1. As a result, the IR-CCD image sensors operating at 77K indicate an approximate 0.06-0.4 increase in relative optical responsivity in the spectral range of from 1 to 5μm. CCD imaging quality with microlens has been improved comparing to that without microlens to a great extent.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Caijun Ke, Xinjian Yi, Zhimou Xu, Jianjun Lai,