Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10408879 | Optics and Lasers in Engineering | 2005 | 10 Pages |
Abstract
The effect of sub-threshold pulses of circularly polarized Ti:sapphire femtosecond laser system on crystalline (1Â 0Â 0) silicon wafer was investigated. Surface damage morphologies were studied by irradiating the test silicon surface with pulses (peak fluence of 0.25Â J/cm2) in succession. These pulses were below the single-pulse surface damage threshold. After the few initial pulses, the observed surface damage morphologies were found to be characterized by a minor phase change region and a major surface damage area at the center, corresponding to the well-known laser-induced periodic surface structure (LIPSS). Further increase in the number of pulses resulted in the formation of new surface morphologies with different features such as ablation, modification, and re-deposited materials. These features were reproducible and more distinguishable at higher number of pulses.
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Authors
D.V. Tran, H.Y. Zheng, Y.C. Lam, V.M. Murukeshan, J.C. Chai, D.E. Hardt,