Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10409082 | Sensors and Actuators A: Physical | 2007 | 5 Pages |
Abstract
AlGaN ultraviolet metal-semiconductor-metal photodetectors (PDs) with low temperature (LT)-AlN and LT-GaN cap layers were prepared on Si substrates. Unlike PDs prepared on sapphire substrates, no markedly reduction in dark current was observed from the PD with LT-GaN cap layer. With an incident wavelength of 305 nm and an applied bias of 5 V, it was found that peak responsivities were 0.02, 0.005 and 0.007 A/W for the PDs with LT-AlN cap layer, with LT-GaN cap layer and without cap layer, respectively. The corresponding detectivities were 2.2 Ã 1010, 1.36 Ã 1010 and 1.55 Ã 1010 cm Hz0.5 Wâ1, respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
S.J. Chang, T.K. Ko, J.K. Sheu, S.C. Shei, W.C. Lai, Y.Z. Chiou, Y.C. Lin, C.S. Chang, W.S. Chen, C.F. Shen,