Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10409621 | Sensors and Actuators A: Physical | 2005 | 6 Pages |
Abstract
High temperature shape memory NiTiHf thin films with varying hafnium contents up to 28.7 at.% were fabricated by DC magnetron sputtering using simultaneous sputter deposition from separate elemental targets. The required film composition was achieved by adjusting the power ratio to the targets. The as-deposited films were amorphous; a post deposition annealing was performed at 550 °C to crystallize the films. Two-micron thick films were characterized by energy dispersive spectroscopy in a scanning electron microscope, temperature controlled X-ray diffraction, differential scanning calorimetry, and atomic force microscopy. The results showed that above 10 at.% Hf additions the transformation temperatures increased considerably over NiTi. The crystallization temperature of the films varied as a function of Hf concentration and was as high as 519.2 °C, at Hf content of 28.7 at.%. The R-phase transformation was observed during cooling at compositions less than 16 at.% Hf. The transformation temperatures confirmed that the films are comparable with bulk NiTiHf alloy of similar composition.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
S. Sanjabi, Y.Z. Cao, Z.H. Barber,