Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10409647 | Sensors and Actuators A: Physical | 2005 | 4 Pages |
Abstract
A new flexible low-pressure sensor design with convention architectures of n-type doped hydrogenated amorphous silicon with metal-on-amorphous silicon contacts on flexible substrate is fabricated. The sensing elements are wired according to a full Wheatstone-bridge layout, to reduce any temperature effects. These low-pressure sensors are subjected to repetitive strains/pressure testing. The experiment demonstrates a linear pressure relationship in the 0-2.0 psi range with a sensitivity of 1.953 ± 0.020 mV/psi. The measurements observed are in good agreement with the analytical solution.
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Authors
H.C. Lim, B. Schulkin, M.J. Pulickal, S. Liu, R. Petrova, G. Thomas, S. Wagner, K. Sidhu, J.F. Federici,