Preparation of 128 element of IR detector array based on vanadium oxide thin films obtained by ion beam sputtering

Polycrystalline VOx thin films were deposited on Si substrates by ion beam sputtering deposition in oxidation atmosphere. SEM images show that VOx thin films were grown into compact and smooth surfaces. Four-point probe measurements indicated that the VOx thin films own good homogeneity and high temperature coefficient of resistance (TCR ∼ −0.02 K−1). After the films' deposition, micromachining processes including lithography and metallization connection was used to fabricate the detector array. As a result, the 128 element of IR detector array with a responsivity of 2 × 108 cm Hz1/2/W and a detectivity of 5 kV/W at current bias of 100 μA were achieved.