Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10409853 | Optics & Laser Technology | 2005 | 5 Pages |
Abstract
A lamellar mirror made from Si wafer by anisotropic chemical etching and coated with gold has been demonstrated as an intracavity wavelength selector for the far-infrared p-Ge laser. The etching process produces rectangular grooves with precisely predetermined depth and 100nm surface smoothness. This lamellar-grating structure defines the resonant laser wavelength within the broad tuning range of the p-Ge laser. Single wavelength laser operation with this mirror has been demonstrated on the third-order resonance with an active cavity finesse of at least 0.09.
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Authors
T.W. Du Bosq, R.E. Peale, E.W. Nelson, A.V. Muravjov, D.A. Walters, G. Subramanian, K.B. Sundaram, C.J. Fredricksen,