Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411110 | Solid-State Electronics | 2005 | 7 Pages |
Abstract
We obtain a transfer function and a circuit model for separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM-APD's). This model is used to calculate the frequency and time responses of the APD's, and to investigate the influence of the carrier velocities and dead-space effect on the bandwidth of the devices. It is shown that for thinner APD's, the dead-space effect can be included by considering a non-local model for carrier velocities, and a local model for impact ionization rates. The new approach is easier than the previous methods, and the calculated results are in good agreement with experimental data.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
A. Banoushi, M.R. Kardan, M. Ataee Naeini,