Article ID Journal Published Year Pages File Type
10411115 Solid-State Electronics 2005 5 Pages PDF
Abstract
Tin sulfide (SnxSy) films were prepared using spray pyrolysis technique at different substrate temperatures (Ts), (100-450 °C) on Corning 7059 glass substrates. The physical parameters such as electrical resistivity, Hall mobility and net carrier density of the films were determined at room temperature. The films grown in the substrate temperature range, 300-375 °C, were found to be p-type conducting. These SnS films showed average electrical resistivity of ∼30 Ω cm, Hall mobility of ∼130 cm2/V s and carrier density, >1015 cm−3. The temperature dependence of electrical conductivity of the films was also studied and the activation energies evaluated. The results obtained were discussed and reported.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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