Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411115 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
Tin sulfide (SnxSy) films were prepared using spray pyrolysis technique at different substrate temperatures (Ts), (100-450 °C) on Corning 7059 glass substrates. The physical parameters such as electrical resistivity, Hall mobility and net carrier density of the films were determined at room temperature. The films grown in the substrate temperature range, 300-375 °C, were found to be p-type conducting. These SnS films showed average electrical resistivity of â¼30 Ω cm, Hall mobility of â¼130 cm2/V s and carrier density, >1015 cmâ3. The temperature dependence of electrical conductivity of the films was also studied and the activation energies evaluated. The results obtained were discussed and reported.
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Authors
N. Koteeswara Reddy, K.T. Ramakrishna Reddy,