| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411125 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
A normalized analytical solution for the capacitance associated with a MOSFET surface under non-equilibrium conditions is presented. It is shown that this model can be mapped into an equivalent equilibrium problem with 98% accuracy for near intrinsic samples (UBÂ â
 2). The precision becomes even better for highly doped semiconductors. The physics behind this transformation is explained and nomograms generated to present data in a highly normalized form.
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Electrical and Electronic Engineering
Authors
Abhishek Kapoor, R.P. Jindal,