| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411130 | Solid-State Electronics | 2005 | 7 Pages |
Abstract
Technology computer aided design (TCAD) of semiconductor devices exhibits the advantages of reduced development costs and development time. In this worka TCAD methodology has been developed for high-speed photodetectors. The calibration procedure for fixing the free parameters in the physical models employed in the simulation has been illustrated for a commercially available InGaAs/InP p-i-n photodetector. This approach has been illustrated using a specific example where the task was to optimize the absorption layer thickness of a novel photodetector structure.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Biju Jacob, Bernd Witzigmann, Michaela Klemenc, Christophe Petit,