Electrical properties of [1Â 0Â 0]-oriented CVD diamond film

We reported the growth and its electrical properties of [1 0 0]-oriented diamond film using alcohol and hydrogen by HFCVD. SEM and Raman measurements indicated that high quality polycrystalline diamond films with [1 0 0]-faced structure were obtained. Dark current-voltage (I-V), capacitance-frequency (C-F), capacitance-voltage (C-V) and photocurrent under steady-state 55Fe 5.9 keV X-ray excitation of freestanding diamond film were investigated at room temperature. Results indicated that after post-annealing for [1 0 0]-oriented diamond films dark current was in the order of 10−10 A and the photocurrent was of in the order 10−8 A by X-ray irradiation with the applied voltage of 40 V, capacitance and dielectric loss were very small with the value of 2 pF and 2 × 10−3 with the bias voltage of 0.05 V, respectively, and almost had no variation with the change of frequency in high frequencies from 100 kHz to 10 MHz.