| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411174 | Solid-State Electronics | 2005 | 8 Pages |
Abstract
Recent progress in continuing CMOS scaling is accomplished by introducing new device structures and new materials. This paper reviews recent progress in new technology features for silicon CMOS. With the imminent perceived “end” of CMOS device scaling, there is renewed interest in other non-silicon-FET based device and system architectures. We will discuss the merits of various proposed devices and fabrication techniques and suggest areas for further study.
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Authors
H.-S. Philip Wong,