Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411176 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
Frequency-scanned and lock-in common-mode-rejection demodulation schemes were used with laser infrared photothermal radiometric (PTR) detection of B+, P+, and As+ ion-implanted Si wafers, with or without surface-grown oxides. The implantation energy was 100Â keV with doses in the range 1Â ÃÂ 1011-1Â ÃÂ 1013Â ions/cm2. The lock-in common-mode-rejection demodulation (CMRD) scheme exhibited superior signal resolution in all cases where the conventional frequency-scan signals were essentially overlapped. These were B+-implants in the dose range 1Â ÃÂ 1012-1Â ÃÂ 1013Â ions/cm2, and P+-implants in the 1012Â ions/cm2 range.
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Authors
Andreas Mandelis, Felipe Rabago,