Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411177 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 Ã 1017 cmâ3 using Pd/Ni/Au metallization was formed. An anneal at 500 °C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 Ã 10â5 Ω cm2. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) depth profiles of Pd/Ni/Au contacts annealed at 500 °C demonstrated a strong correlation between Ni and Pd interdiffusion toward the GaN surface and a reduction in specific contact resistance. The low contact resistance is attributed to the reduction of the native oxide by Ni diffusion along with the formation of Pd and Ni related-gallide phases at the p-GaN surface region.
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Authors
H.K. Cho, T. Hossain, J.W. Bae, I. Adesida,