Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411179 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
Oxide surface passivation grown by atomic layer deposition (ALD) has been applied to GaAs metal-semiconductor field-effect transistors (MESFETs). The breakdown characteristic of a MESFET is greatly improved by both Al2O3 and HfO2 passivation. Three-terminal transistor breakdown voltage is improved to a maximum level of 20Â V with Al2O3 passivation from 11Â V without any surface passivation. With the removal of native oxide and passivation on GaAs surface at drain-gate (D-G) and source-gate (S-G) spacings, the device breakdown characteristics are significantly improved.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
P.D. Ye, G.D. Wilk, B. Yang, S.N.G. Chu, K.K. Ng, J. Bude,