Article ID Journal Published Year Pages File Type
10411179 Solid-State Electronics 2005 5 Pages PDF
Abstract
Oxide surface passivation grown by atomic layer deposition (ALD) has been applied to GaAs metal-semiconductor field-effect transistors (MESFETs). The breakdown characteristic of a MESFET is greatly improved by both Al2O3 and HfO2 passivation. Three-terminal transistor breakdown voltage is improved to a maximum level of 20 V with Al2O3 passivation from 11 V without any surface passivation. With the removal of native oxide and passivation on GaAs surface at drain-gate (D-G) and source-gate (S-G) spacings, the device breakdown characteristics are significantly improved.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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