Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411196 | Solid-State Electronics | 2005 | 9 Pages |
Abstract
This paper shows a comprehensive experimental and numerical investigation of proton-irradiated diodes for high-power snubberless applications. By means of DC and transient current-voltage measurements, OCVD extraction of lifetimes, C-V profiling, and DLTS trap characterization, a wide set of parameters was experimentally extracted and fed into a physically accurate mixed-mode simulation model. The numerical results are shown to be consistent with the available measured data, for example in showing the much better turn-off softness of proton-irradiated samples versus electron-irradiated ones. The complete physical/electrical model set-up in this work can now be used as an aid in the design and development of new proton-irradiated diodes.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, R. Mosca,