Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411198 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
By self-consistently solving Schrödinger and Poisson equations, an extremely high two-dimensional electron-gas (2DEG) sheet density of 1.01 Ã 1014 cmâ2 is calculated in a novel InN-based InxGa1âxN/InN heterostructure field-effect transistor with an In content of x = 0.1 and a doping level of Nd = 1 Ã 1019 cmâ3 in the InxGa1âxN barrier layer. It is increased by almost one order of magnitude as compared to â¼1 Ã 1013 cmâ2 obtained in a conventional GaN-based Al0.2Ga0.8N/GaN heterostructure. With increasing In content of the InxGa1âxN barrier from x = 0.05 to 0.15, the 2DEG sheet density decreases from 1.14 Ã 1014 cmâ2 to 0.91 Ã 1014 cmâ2 due to the decreased of polarization charges and the reduced conduction band offset. And the 2DEG density increases slightly with increasing doping level of the InxGa1âxN barrier.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Y.C. Kong, Y.D. Zheng, C.H. Zhou, Y.Z. Deng, B. Shen, S.L. Gu, R. Zhang, P. Han, R.L. Jiang, Y. Shi,