Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411200 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs). The gate dielectric is obtained by oxidizing AlGaAs in liquid phase. The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kuan-Wei Lee, Po-Wen Sze, Yeong-Her Wang, Mau-Phon Houng,