Article ID Journal Published Year Pages File Type
10411200 Solid-State Electronics 2005 5 Pages PDF
Abstract
The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs). The gate dielectric is obtained by oxidizing AlGaAs in liquid phase. The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
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