| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411208 | Solid-State Electronics | 2005 | 4 Pages |
Abstract
Analytical approximation for the MOSFET surface potential is important for the development of the computationally efficient surface-potential-based compact MOSFET models. In the previous work such an approximation was developed in the gradual channel approximation. Here we present an extended version which takes into account the lateral field gradient essential in small-geometry transistors.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
T.L. Chen, G. Gildenblat,