Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411585 | Solid-State Electronics | 2016 | 11 Pages |
Abstract
We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k·p and non-parabolic effective mass models. Parameter sets for the non-parabolic Î, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
George Zerveas, Enrico Caruso, Giorgio Baccarani, Lukas Czornomaz, Nicolas Daix, David Esseni, Elena Gnani, Antonio Gnudi, Roberto Grassi, Mathieu Luisier, Troels Markussen, Patrik Osgnach, Pierpaolo Palestri, Andreas Schenk, Luca Selmi, Marilyne Sousa,