| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411589 | Solid-State Electronics | 2016 | 7 Pages |
Abstract
This work presents a model that allows to explain the resistance variability of OxRAM devices, both in high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution. The model is able to capture both cycle-to-cycle (temporal) and device-to-device (spatial) variability.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Daniele Garbin, Elisa Vianello, Quentin Rafhay, Mourad Azzaz, Philippe Candelier, Barbara DeSalvo, Gerard Ghibaudo, Luca Perniola,