Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411595 | Solid-State Electronics | 2016 | 6 Pages |
Abstract
We report the fabrication and the characterization of tunnel FETs fabricated on SiGe-On-Insulator with a High-κ Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on ID(VG) characteristics is presented and analyzed: compressive Si0.75Ge0.25 enables to increase by a factor of 25 the saturation currents, even at small gate length (LG = 50 nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).
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Authors
C. Le Royer, A. Villalon, L. Hutin, S. Martinie, P. Nguyen, S. Barraud, F. Glowacki, F. Allain, N. Bernier, S. Cristoloveanu, M. Vinet,