Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411596 | Solid-State Electronics | 2016 | 6 Pages |
Abstract
A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. TCAD modeling has been used to assess possible mechanisms of the forward-bias leakage current. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the deeper buffer layers, indicating that conduction is dominated by electron injection from silicon into a continuum of states at a given energy offset in the transition layer, which might be associated with conductive dislocation defects. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.
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Authors
Davide Cornigli, Federico Monti, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani,