| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411600 | Solid-State Electronics | 2016 | 6 Pages |
Abstract
This paper presents a systematic study of Z2-FET (Zero Subthreshold Swing and Zero Impact Ionization transistor) fabricated in advanced Fully Depleted Silicon On Insulator (FDSOI) 28Â nm technology with Ultra-Thin Body and Buried Oxide (UTBB). It is a recent sharp-switching device that achieves remarkable performance in terms of leakage current and triggering control. The device features an extremely sharp on-switch, an adjustable triggering voltage (VON), and is considered for Electro-Static Discharge (ESD) protection. The operation principle relies on the modulation of electrons and holes injection barriers. Experimental results show the effect of low and high temperature on the output characteristics, triggering voltage and leakage current.
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Authors
Hassan El Dirani, Yohann Solaro, Pascal Fonteneau, Philippe Ferrari, Sorin Cristoloveanu,