| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411601 | Solid-State Electronics | 2016 | 6 Pages |
Abstract
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n-Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene - n-Si photodiodes show a considerable responsivity of 270Â mAÂ Wâ1 within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2) - p-type silicon photodiode.
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Authors
Sarah Riazimehr, Andreas Bablich, Daniel Schneider, Satender Kataria, Vikram Passi, Chanyoung Yim, Georg S. Duesberg, Max C. Lemme,