Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411602 | Solid-State Electronics | 2016 | 6 Pages |
Abstract
In this paper we will discuss the physics and the electronics of off-plane transport through hetero-structures of graphene and 2D materials. We investigate transport across vertical heterostructures of 2D materials with multi-scale simulations, including first-principle density functional theory and non-equilibrium Green's functions based on NanoTCAD ViDES. We show that unexpected behaviors emerge, which are not observed in the more familiar semiconductor heterostructures based on III-V and II-VI materials systems, and that are not predicted by simplistic physical models. Such properties have a significant impact on the design and performance of transistors for digital or high frequency operations.
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Authors
G. Iannaccone, Q. Zhang, S. Bruzzone, G. Fiori,