Comparison of self-heating and its effect on analogue performance in 28Â nm bulk and FDSOI

In this work self-heating and its effect on analogue device parameters are compared in 28 nm technology bulk and FDSOI MOS devices. It is shown that for self-heating characterisation in advanced MOSFETs the RF extraction technique is more suitable than the pulsed I-V. It is found that the thermal resistance is ∼3.4 times higher and the temperature rise is ∼2.5 times higher in 28 nm gate length FDSOI than in bulk. However, in spite of stronger self-heating, FDSOI devices outperform bulk over a wide frequency range. Moreover, device parameters degradation with temperature is attenuated in FDSOI transistors.