| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411608 | Solid-State Electronics | 2011 | 7 Pages |
Abstract
⺠RTS analysis allows the determination of single trap energy level and localization. ⺠For 0.8 nm gate oxide thick, transport is governed by nc-Si and interface traps. ⺠RTS noise is the basic feature responsible for l/fγ noise in large area devices.
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Authors
M. Trabelsi, L. Militaru, N. Sghaier, A. Souifi, N. Yacoubi,