| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411612 | Solid-State Electronics | 2011 | 8 Pages |
Abstract
⺠We present a complete model to describe charge trap devices behavior. ⺠In this study any mathematical aspect regarding holes and electrons is detailed modeled. ⺠Experimental data coming from different TANOS and SONOS devices are correctly reproduced.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Aurelio Mauri, Salvatore M. Amoroso, Christian Monzio Compagnoni, Alessandro Maconi, Alessandro S. Spinelli,