Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411613 | Solid-State Electronics | 2011 | 4 Pages |
Abstract
GaN-based LEDs with photonic crystal (PhC) patterns on an n- and a p-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20Â mA on Transistor Outline (TO)-can package, the light output power of the GaN-based LED with PhC patterns on an n- and a p-GaN layer is enhanced by a factor of 1.30, and the wall-plug efficiency is increased by 24%. In addition, the higher output power of the LED with PhC patterns on the n- and p-GaN layer is due to better crystal quality on n-GaN and higher scattering effect on p-GaN surface using PhC pattern structure.
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Authors
H.W. Huang, Fang-I Lai, S.Y. Kuo, J.K. Huang, K.Y. Lee,