| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411615 | Solid-State Electronics | 2011 | 7 Pages |
Abstract
⺠A compact model of short-channel effects for GAA MOSFET has been developed. ⺠The model uses a well-known extraction method making the model simple and accurate. ⺠Each term is used in a model core in order to provide a short-channel correction. ⺠The compact model is well described and is suitable with circuit design tools. ⺠The model is validated using TCAD simulations for all gate lengths down to 10nm.
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Authors
Bastien Cousin, Marina Reyboz, Olivier Rozeau, Marie-Anne Jaud, Thomas Ernst, Jalal Jomaah,