| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411616 | Solid-State Electronics | 2011 | 9 Pages |
Abstract
⺠Devices in commercial bulk SiGe BiCMOS platform characterized to demonstrate acceptable performance up to 300 °C. ⺠Proven SiGe BGR circuit designed for wide temperature operation verified to work up to 300 °C. ⺠High temperature device and circuit level compensation techniques shown to significantly improve SiGe BGR performance from â225 °C to 300 °C. ⺠Non-optimized SiGe temperature sensor circuit shown to compare favorably with commercially available temp sensors up to 225 °C.
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Engineering
Electrical and Electronic Engineering
Authors
D.B. Thomas, L. Najafizadeh, J.D. Cressler, K.A. Moen, N. Lourenco,