| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411619 | Solid-State Electronics | 2011 | 5 Pages |
Abstract
⺠We demonstrate the thickness by controlling a high 72Ge/74Ge ratio, the device performance can be enhanced. ⺠The optimum conditions of Ge PAI would help the confinement of boron ions to avoid the channel effect. ⺠a low 72Ge/74Ge ratio would cause the degradation of Vth roll-off and Ion/Ioff ratio. ⺠We examine a thinner Ge amorphous layer has a weak ability to suppress the channeling tail of boron.
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Authors
Lu-Chang Chen, Shang-Fu Chen, Meng-Chyi Wu,