Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411623 | Solid-State Electronics | 2011 | 6 Pages |
Abstract
In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = IDdiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about Ït/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range.
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Authors
Ana Isabela Araújo Cunha, Marcelo Antonio Pavanello, Renan Doria Trevisoli, Carlos Galup-Montoro, Marcio Cherem Schneider,