| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411625 | Solid-State Electronics | 2011 | 4 Pages |
Abstract
⺠We have fabricated p-ZnTe/n-CdTe heterojunction diode by vacuum deposition. ⺠We have determined the dominant conduction mechanisms in the heterojunction. ⺠Barrier height, width of the depletion region have been determined. ⺠A band diagram of the heterojunction has been drawn based on Anderson's Model.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Gowrish K. Rao, Kasturi V. Bangera, G.K. Shivakumar,