| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411627 | Solid-State Electronics | 2011 | 5 Pages |
Abstract
⺠We studied the effect of downscaling of the MOS channel of hybrid GaN MOS-HEMT. ⺠Numerical simulations were used in this study. ⺠The improvement in on-state conduction were quantified. ⺠A Ron,sp of 2.1 mΩ-cm2 was projected for MOS channel of 0.38 μm. ⺠We also found that GaN cap layer reduced short channel effects.
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Authors
Zhongda Li, T. Paul Chow,