Article ID Journal Published Year Pages File Type
10411630 Solid-State Electronics 2011 5 Pages PDF
Abstract
► Step-by-step silicidation of silicon nanowire. ► The penetration depth is proportional to the total annealing time. ► The current-voltage characteristics are modeled by back-to-back Schottky diodes.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
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