Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411630 | Solid-State Electronics | 2011 | 5 Pages |
Abstract
⺠Step-by-step silicidation of silicon nanowire. ⺠The penetration depth is proportional to the total annealing time. ⺠The current-voltage characteristics are modeled by back-to-back Schottky diodes.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Su Heon Hong, Myung Gil Kang, Byung-Sung Kim, Duk Soo Kim, Jae Hyun Ahn, Dongmok Whang, Sang Hoon Sull, Sung Woo Hwang,