Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411631 | Solid-State Electronics | 2011 | 6 Pages |
Abstract
We analyze the channel and surface charge dynamics of a high voltage AlGaN/GaN Heterostructure Field Effect Transistor (HFET) operating as a power switch. We demonstrate that operation in the voltage range exceeding 100Â V without field plates involves alternating of the surface compensating charge in the gate-drain spacing. Developed model predicts the switching speed limitation of power HFET determined by the surface recharge rate and provides new, voltage-scalable design approach of AlGaN/GaN power devices.
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Authors
Alexei Koudymov,