Article ID Journal Published Year Pages File Type
10411633 Solid-State Electronics 2011 7 Pages PDF
Abstract
► We model a surface potential based drain current for asymmetric DG MOSFETs. ► The model is applicable for both heavily and lightly doped Silicon channel. ► The surface potential at both the gates are solved using proper Iterative techniques. ► The effect of volume inversion is shown in case of lightly doped channel.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
A surface potential based drain current model for asymmetric double gate MOSFETs
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